Equipment name: digital storage transistor characteristic graph instrument

Device model: WQ4830

Collector current: 20μA/div ~ 5A/div, max 50A

Diode Reverse Leakage Current: 0.02μA/div ~ 1μA/div

Collector voltage Vce: 10mV/div ~ 50V/div, max 500V

Base voltage Vbe: 50mV/div ~ 1V/div

Diode reverse withstand voltage Vd: 100V/div ~ 500V/div, max 5000V

Step current: 0.2μA/level ~ 0.5A/level, 5A max

Step voltage: 10mV/level ~ 1V/level, maximum 10V.

Collector Scanning Voltage (DC/AC) Peak: 10V(50A), 50V(10A), 100V(1A), 500V(0.1A)

Diode reverse voltage: 5000V (5mA)

Applicable object: diode, transistor characteristic test